主要论著目录

The phase-shift lifetime of excess cariers in semiconductors under sinusoidal injection

日期:2021-03-25

摘要:In many semiconductor devices, excess carriers work under sinusoidal injection by duration, and then the relaxation process of excess carriers injected is shown as a phase delay △φ between the injected signal and the output signal. There exists a simple relation between the relaxation time constant τ~φ,namely, the lifetime of excess carriers, and △φ:

作者:王启明

来源(出处): A Semi-monthly Journal of Science(Foreign Language Edition)

发表日期:1966年3月2日

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详细

The phase-shift lifetime of excess cariers in semiconductors under sinusoidal injection

日期:2021-03-25

摘要:In many semiconductor devices, excess carriers work under sinusoidal injection by duration, and then the relaxation process of excess carriers injected is shown as a phase delay △φ between the injected signal and the output signal. There exists a simple relation between the relaxation time constant τ~φ,namely, the lifetime of excess carriers, and △φ:

作者:王启明

来源(出处): A Semi-monthly Journal of Science(Foreign Language Edition)

发表日期:1966年3月2日